Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and...

Full description

Saved in:
Bibliographic Details
Main Authors KARIYADA EIJI, OZAKI YASUAKI, TANIGAWA HIRONOBU, SUEMITSU KATSUMI, OHSHIMA NORIKAZU, MORI KAORU, NAGAHARA KIYOKAZU, SUZUKI TETSUHIRO
Format Patent
LanguageChinese
English
Published 30.05.2012
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
Bibliography:Application Number: CN201110385132