Method for increasing writing speed of floating body dynamic random access memory

The invention discloses a method for increasing a writing speed of a floating body dynamic random access memory. Through back implantation of boron on a grid electrode of a floating body effect access memory of an NMOS (N-channel Metal Oxide Semiconductor) device, in a subsequent heat diffusion proc...

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Bibliographic Details
Main Author YU LIUJIANG
Format Patent
LanguageChinese
English
Published 28.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a method for increasing a writing speed of a floating body dynamic random access memory. Through back implantation of boron on a grid electrode of a floating body effect access memory of an NMOS (N-channel Metal Oxide Semiconductor) device, in a subsequent heat diffusion process, a boron content in a gate oxide is increased, so that electrons of an electron hole pair, generated by collision, are easier to enter the grid electrode through the gate oxide, thus more holes are swept to a substrate, a substrate current of the floating body effect access unit is increased, and the writing speed of the floating body effect access memory is increased.
Bibliography:Application Number: CN201110265239