Method for forming semiconductor device

A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A...

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Bibliographic Details
Main Authors HSU FAN-YI, HUANG MING-JIE, HSU KUANG-YUAN, OUYANG HUI, YEH MATT, LIAO SHIN HSIEN, LEE DA-YUAN, HUANG YIN
Format Patent
LanguageChinese
English
Published 27.11.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal gate electrode is formed by filling the modified profile opening with a conductive material. A semiconductor device is also described, the device having a metal gate structure with a first width and a second, differing, width.
Bibliography:Application Number: CN201110187893