Semiconductor structure and manufacture method thereof

• Main Authors: WU KUNTAI, WANG ZHIZHAO, LIN QINGSHAN
• Format: Patent
• Language: Chinese; English
• Published: 14.03.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor structure and a manufacture method thereof. The semiconductor structure comprises a semiconductor wafer, wherein the semiconductor wafer is provided with grain structures of a plurality of semiconductor devices, each grain structure comprises a grain body, a metal circuit layer, a convex block and a metal layer, the metal circuit layer is formed in the grain body, the convex block formed on the metal circuit layer by adopting a semiconductor front section process for protruding the grain body, the metal layer is positioned on one side of the convex block, relative to the metal circuit layer, and the activity of the metal layer is less than that of the convex block. The semiconductor structure provided by the invention has the advantages of easiness in manufacturing, cost saving and the like.