Method for manufacturing semiconductor thin-film material

The invention discloses a method for manufacturing a semiconductor thin-film material. The method comprises the following steps of: in the manufacturing process of a surface acoustic wave gas sensor, dispensing a mixed solution containing triethanolamine and a carbon nano tube on a delay line of a d...

Full description

Saved in:
Bibliographic Details
Main Authors LI DONGMEI, YAN XUEFENG, HUO ZONGLIANG, ZHOU WEN, XIE CHANGQING, HOU CHENGCHENG, LIU MING, WANG XING
Format Patent
LanguageChinese
English
Published 14.03.2012
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MANUFACTURE OR TREATMENT THEREOF
MEASURING
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
TESTING
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:The invention discloses a method for manufacturing a semiconductor thin-film material. The method comprises the following steps of: in the manufacturing process of a surface acoustic wave gas sensor, dispensing a mixed solution containing triethanolamine and a carbon nano tube on a delay line of a double delay line-type oscillator, and drying in vacuum to form a sensitive film. According to the invention, the polymerized sensitive film is prepared by adding the ground carbon nano tube to the triethanolamine; and compared with the pure triethanolamine sensor, the triethanolamine/carbon nano tube sensor has greatly improved sensitivity, stability and detection quality.
Bibliography:Application Number: CN20101247769