Method for removing micro-damage layer from crystalline silicon surface after RIE (Reactive Ion Etching) flocking

• Main Author: CAI WENHAO
• Format: Patent
• Language: Chinese; English
• Published: 29.02.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to the field of surface treatment method for silicon chips, in particular to a method for removing a micro-damage layer from a crystalline silicon surface after RIE (Reactive Ion Etching) flocking. The method comprises the following steps of: cleaning an RIE-treated silicon chip with a mixed acid liquid of HNO3 and HF diluted with CH3COOH, wherein the volume percentage of the CH3COOH is 0.1-10 percent, and the volume percentage of the HNO3 is 85.0-99.5 percent; and thermally treating in a N2 atmosphere for 1-30 minutes at the temperature of 200 to 400 DEG C. Compared with an ordinary damage removing process, the invention has the advantages that: a non-aqueous acid etching liquid is adopted, and the ratio of HNO3 in an etching solution is increased simultaneously, sothat the etching rate is moderate, the process is easy to control, the etching uniformity is high, and the microscopic structure of an RIE flocked surface is kept; the method is suitable for industrial production; and a subse