Manufacturing process for new-generation silicon-based solar cell p-n junction

• Main Author: GAO WENXIU
• Format: Patent
• Language: Chinese; English
• Published: 01.02.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a manufacturing process for a new-generation silicon-based solar cell p-n junction. The manufacturing process comprises the following steps of: 1) cleaning 3-4N polysilicon serving as a substrate; 2) dipping in a closed environment in the protection of argon; 3) taking the dipping sheet out, annealing by stages, cooling to room temperature, coating one layer of active or non-active phosphorous source on a p-type layer by using a rotary drum at room temperature, and drying; 4) performing high-temperature main diffusion under the conditions of high temperature and argon protection to form a shallow junction; and 5) rediffusing, redistributing impurities and annealing at the given temperature to finish deep junction at the crystal boundary and manufacture the p-n junction. The manufacturing process has the advantages that: high-purity liquid silicon on the polysilicon substrate with relatively low purity is dipped by the dipping sheet, so that waste of materials is avoided; and the solar