Production method of shallow channel isolation region

• Main Author: NING ZHENJIA
• Format: Patent
• Language: Chinese; English
• Published: 01.02.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a production method of a shallow channel isolation region, which comprises the following steps that: a semiconductor underlay is provided, a mask layer is formed on the semiconductor underlay, the semiconductor underlay is etched to form a channel, an oxidized isolation layer is formed to fill the channel, etching-back processing on the mask layer is undertaken after the oxidized isolation layer is smoothened, a gap is formed between the oxidized isolation layer and the mask layer, and an oxidized layer is formed to fill the gap. By forming the gap between the mask layer and the oxidized isolation layer and by filling the gap with the oxidized layer, not only can the hollow formation problem inside the oxidized isolation layer be avoided, but also the corrosion isdifficult to happen in the subsequent wet-method washing process, and the broken corner formation problem on the top edge of the shallow channel isolation region can be effectively reduced.