Memory having negative voltage write assist circuit and method therefor

A method of writing data to a selected column of a memory includes selecting a first column. The data writing is initiated by applying a logic high to a first bit line of the first column and a first potential to a second bit line of the first column that is lower than the logic high. The first pote...

Full description

Saved in:
Bibliographic Details
Main Authors COOPER TROY L, KENKARE PRASHANT U
Format Patent
LanguageChinese
English
Published 10.09.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A method of writing data to a selected column of a memory includes selecting a first column. The data writing is initiated by applying a logic high to a first bit line of the first column and a first potential to a second bit line of the first column that is lower than the logic high. The first potential is removed and a second potential is applied to the second bit line. The second potential is less than the first potential. The first potential may be ground, and the second potential may be a negative voltage. Reducing the write voltage for the bit line that is receiving a logic low improves its ability to be written. By first bringing the logic low to the first potential, which may be ground, and then further reducing the applied voltage, the requirements on the source of the second potential are reduced.
Bibliography:Application Number: CN201080005845