Self-aligned multiple gate transistor formed on bulk substrate and manufacture method thereof

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Bibliographic Details
Main Authors GROSCHOPF JOHANNES, SCHEIPER THILO, WEI ANDY, SCHROEDER VIVIEN, WERNER THOMAS
Format Patent
LanguageChinese
English
Published 26.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Bibliography:Application Number: CN20111136239