Bipolar transistor

A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the coll...

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Bibliographic Details
Main Authors MIYAMOTO HIRONOBU, ANDO YUJI, INOUE TAKASHI, OKAMOTO YASUHIRO, OTA KAZUKI, NAKAYAMA TATSUO
Format Patent
LanguageChinese
English
Published 06.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [0001] direction of the substrate. The first nitride semiconductor includes: InycAlxcGa1-xc-ycN (0 xc 1, 0 yc 1, 0<xc+yc 1). In the first nitride semiconductor, a length of an a-axis on a surface side is longer than a length of an a-axis on a substrate side.
Bibliography:Application Number: CN200980150271