Photovoltaic cells with cadmium telluride intrinsic layer

• Main Author: KOREVAAR BASTIAAN ARIE
• Format: Patent
• Language: Chinese; English
• Published: 09.11.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

A photovoltaic (PV) cell (10) includes a first electrically conductive layer (12), a p-type semiconductor layer (14), and a substantially intrinsic semiconductor layer (16) with a median grain size of at least about five (5) [mu]m and comprising a cadmium and tellurium. The PV cell further includes an n-type semiconductor layer (18) and a second electrically conductive layer (22). The substantially intrinsic semiconductor layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A photovoltaic cell (10) that includes a first electrically conductive layer (12) comprising a textured substrate and a substantially intrinsic semiconductor layer (16), with a median grain size of at least about five (5) [mu]m and comprising cadmium and tellurium, is also provided.