Spacer formation in the fabrication of planar bipolar transistors

A bipolar transistor is fabricated having a collector (52) in a substrate (1) and a base (57, 58) and an emitter (59) formed over the substrate. The base has a stack region (57) which is laterally separated from the emitter (59) by an electrically insulating spacer (71). The insulating spacer (71) h...

Full description

Saved in:
Bibliographic Details
Main Authors DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS, MEUNIER-BEILLARD PHILIPPE, VANHOUCKE TONY, MERTENS HANS
Format Patent
LanguageChinese
English
Published 05.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A bipolar transistor is fabricated having a collector (52) in a substrate (1) and a base (57, 58) and an emitter (59) formed over the substrate. The base has a stack region (57) which is laterally separated from the emitter (59) by an electrically insulating spacer (71). The insulating spacer (71) has a width dimension at its top end at least as large as the width dimension at its bottom end and forms a r-shape or an oblique shape. The profile reduces the risk of silicide bridging at the top of the spacer in subsequent processing, while maintaining the width of emitter window.
Bibliography:Application Number: CN201110083001