Spacer formation in the fabrication of planar bipolar transistors

A bipolar transistor is fabricated having a collector (52) in a substrate (1) and a base (57, 58) and an emitter (59) formed over the substrate. The base has a stack region (57) which is laterally separated from the emitter (59) by an electrically insulating spacer (71). The insulating spacer (71) h...

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Bibliographic Details
Main Authors DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS, MEUNIER-BEILLARD PHILIPPE, VANHOUCKE TONY, MERTENS HANS
Format Patent
LanguageChinese
English
Published 12.10.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bipolar transistor is fabricated having a collector (52) in a substrate (1) and a base (57, 58) and an emitter (59) formed over the substrate. The base has a stack region (57) which is laterally separated from the emitter (59) by an electrically insulating spacer (71). The insulating spacer (71) has a width dimension at its top end at least as large as the width dimension at its bottom end and forms a r-shape or an oblique shape. The profile reduces the risk of silicide bridging at the top of the spacer in subsequent processing, while maintaining the width of emitter window.
Bibliography:Application Number: CN201110083001