Plasma processing apparatus and semiconductor device manufacturing method

A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an...

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Bibliographic Details
Main Authors OHTANI RYUJI, MIZUKAMI SHUNSUKE, YAMAMOTO TAKASHI, HIGUCHI KIMIHIRO
Format Patent
LanguageEnglish
Published 11.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.
Bibliography:Application Number: CN201110083707