Partial silicon on insulator (PSOI) lateral super-junction power semiconductor device

The invention discloses a PSOI lateral super-junction power semiconductor device. The PSOI lateral super-junction power semiconductor device comprises a semiconductor body, an insulation buried layer, a gate and an electrode, wherein the gate and the electrode are arranged on the semiconductor body,...

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Main Authors WANG WEI, ZHANG ZHIJIE, LAI FUWEN, WANG DAIHUA, WANG YU, WANG WENLIAN
Format Patent
LanguageChinese
English
Published 28.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract The invention discloses a PSOI lateral super-junction power semiconductor device. The PSOI lateral super-junction power semiconductor device comprises a semiconductor body, an insulation buried layer, a gate and an electrode, wherein the gate and the electrode are arranged on the semiconductor body, a super-junction structure is arranged above the insulation buried layer, consists of super-junction n regions and super-junction p regions in alternate distribution, and is connected with a p-type body region. An n-type compensation region arranged in a direction vertical to the super-junction structure is connected with the super-junction structure and the insulation buried layer, and extends into a substrate. By the invention, the substrate-assisted depletion effect existing in the lateral super-junction power device can be effectively inhibited so as to improve the voltage resistance of the device. Compared with the conventional charge-compensation lateral super-junction device, the PSOI lateral super-junction
AbstractList The invention discloses a PSOI lateral super-junction power semiconductor device. The PSOI lateral super-junction power semiconductor device comprises a semiconductor body, an insulation buried layer, a gate and an electrode, wherein the gate and the electrode are arranged on the semiconductor body, a super-junction structure is arranged above the insulation buried layer, consists of super-junction n regions and super-junction p regions in alternate distribution, and is connected with a p-type body region. An n-type compensation region arranged in a direction vertical to the super-junction structure is connected with the super-junction structure and the insulation buried layer, and extends into a substrate. By the invention, the substrate-assisted depletion effect existing in the lateral super-junction power device can be effectively inhibited so as to improve the voltage resistance of the device. Compared with the conventional charge-compensation lateral super-junction device, the PSOI lateral super-junction
Author WANG WENLIAN
ZHANG ZHIJIE
WANG WEI
LAI FUWEN
WANG DAIHUA
WANG YU
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Snippet The invention discloses a PSOI lateral super-junction power semiconductor device. The PSOI lateral super-junction power semiconductor device comprises a...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Partial silicon on insulator (PSOI) lateral super-junction power semiconductor device
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