Partial silicon on insulator (PSOI) lateral super-junction power semiconductor device

• Main Authors: WANG WEI, ZHANG ZHIJIE, LAI FUWEN, WANG DAIHUA, WANG YU, WANG WENLIAN
• Format: Patent
• Language: Chinese; English
• Published: 28.09.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a PSOI lateral super-junction power semiconductor device. The PSOI lateral super-junction power semiconductor device comprises a semiconductor body, an insulation buried layer, a gate and an electrode, wherein the gate and the electrode are arranged on the semiconductor body, a super-junction structure is arranged above the insulation buried layer, consists of super-junction n regions and super-junction p regions in alternate distribution, and is connected with a p-type body region. An n-type compensation region arranged in a direction vertical to the super-junction structure is connected with the super-junction structure and the insulation buried layer, and extends into a substrate. By the invention, the substrate-assisted depletion effect existing in the lateral super-junction power device can be effectively inhibited so as to improve the voltage resistance of the device. Compared with the conventional charge-compensation lateral super-junction device, the PSOI lateral super-junction