Method for preparing SiC layer on surface of diamond particles
The invention discloses a method for preparing an SiC layer on the surface of diamond particles, which comprises the following steps: evenly mixing diamond particles, Si powder, polycarbosilane, acetone solution and iodine powder, and carrying out solid-phase reaction at 900-1200 DEG C in a vacuum e...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
14.09.2011
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Subjects | |
Online Access | Get full text |
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