Method for preparing SiC layer on surface of diamond particles

• Main Authors: CAO XIONGZHI, ZHANG CUIFANG, YIN BANGYUE, DONG XIAOLEI
• Format: Patent
• Language: Chinese; English
• Published: 14.09.2011
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a method for preparing an SiC layer on the surface of diamond particles, which comprises the following steps: evenly mixing diamond particles, Si powder, polycarbosilane, acetone solution and iodine powder, and carrying out solid-phase reaction at 900-1200 DEG C in a vacuum environment for 1-5 hours, wherein the Si powder accounts for 5-20% of the diamond particles by mass, the polycarbosilane accounts for 0.1-5% of the diamond particles by mass, and the iodine powder accounts for 0.5-5% of the diamond particles by mass; and after the reaction finishes, cooling to room temperature, and passing through a 100-mesh screen to separate out the SiC-layer-coated diamond particles. The SiC layer is formed on the surface of the diamond particles by using the vacuum solid-phase reaction, thereby effectively enhancing the comprehensive properties of the surface of the diamond particles and widening the application range of the diamond particles; and the invention has the advantages of accessible