Composite member

Disclosed is a composite member suitable as a heat-dissipating member for a semiconductor element. Also disclosed is a process for producing the composite member. The composite member is a complex of magnesium or a magnesium alloy and SiC and has a void ratio of less than 3%. The composite member is...

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Bibliographic Details
Main Authors NAKAI YOSHIHIRO, NISHIKAWA TAICHIRO, KUSAKARI MISATO, IWAYAMA ISAO, TAKAKI YOSHIYUKI, IKEDA TOSHIYA
Format Patent
LanguageChinese
English
Published 31.08.2011
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Summary:Disclosed is a composite member suitable as a heat-dissipating member for a semiconductor element. Also disclosed is a process for producing the composite member. The composite member is a complex of magnesium or a magnesium alloy and SiC and has a void ratio of less than 3%. The composite member is produced by forming an oxide film on the surface of a raw material SiC, placing the coated SiC having the oxide film formed thereon in a template, and infiltrating a molten metal (magnesium or a magnesium alloy) into the coated SiC aggregate. The wettability of SiC with the molten metal can be increased by forming the oxide film, whereby the void ratio of the composite member can be reduced. The process enables the production of a composite member having excellent thermal properties including a thermal expansion coefficient of 4 to 10 ppm/K inclusive and a heat conductivity of 180 W/m*K or more.
Bibliography:Application Number: CN200980139128