Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, and mask and submillimetric electrically conductive grid

• Main Authors: VALENTIN EMMANUEL, TCHAKAROV SVETOSLAV, ZAGDOUN GEORGES, NGHIEM BERNARD
• Format: Patent
• Language: Chinese; English
• Published: 24.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS

The invention relates to a method for manufacturing a mask having submillimetric apertures (1, 10), wherein: a first solution of colloidal nanoparticles in a first solvent is deposited for a mask layer, the particles having a given vitreous transition temperature Tg; the mask layer, referred to as the first mask layer, is dried at a temperature lower than said temperature Tg until a mask having a two-dimensional array of submillimetric apertures is obtained, having a substantially straight edge and defining a so-called array mask area; a solid mask area is formed through liquid deposition of a second mask layer onto the surface thereof, the solid mask area being adjacent and contacting the array mask area; and/or at least one cache area is formed, said cache area contacting the array mask area; and/or a mask area, filled through liquid filling of the apertures of a part of the array mask area, is formed after drying the first mask layer. The invention also relates to the mask and to the electrically conductiv