TiO2-ZrO2 composite oxide thin film ultraviolet detector and preparation method thereof

• Main Authors: GUO WENBIN, LIU KUIXUE, RUAN SHENGPING, ZHANG HAIFENG, ZHANG XINDONG, FENG CAIHUI, CHEN WEIYOU, XIE TIANJIAO, ZHOU JINGRAN, LIU CAIXIA
• Format: Patent
• Language: Chinese; English
• Published: 24.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention particularly relates to a high-performance ultraviolet photoelectric detector with low surface state density and a preparation method thereof, wherein the detector takes ultrathin quartz as a substrate, takes a TiO2-ZrO2 composite oxide thin film as a matrix, takes Au, Pt or Ni as a metal interdigital electrode and takes Al or Ag as a light reflection layer. The preparation method comprises the following steps: adopting the sol-gel technology for preparing the TiO2-ZrO2 composite oxide thin film with different mixture ratios, and growing a compact nano-thin film on the ultrathin quartz substrate; further processing the thin film via a high-strength ultraviolet cleaning machine; then performing magnetron sputtering, standard photoetching and stripping technology for forming the interdigital electrode in a certain shape; and finally performing evaporation of the reflection layer on the back surface of an ultrathin quartz plate for improving the light absorption efficiency. By adopting the differen