Nc-Si:H/SiNx superlattice quantum well solar battery

• Main Authors: CHENG GUANGGUI, ZHU JUN, LU CHAO, DING JIANNING, GUO LIQIANG
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a solar battery, in particular to a novel solar battery made of a superlattice nano quantum well material consisting of nc-Si:H and SiNx. An nc-Si:H/SiNx superlattice quantum well solar battery is prepared by using the band gap adjustability of nano silicon and combining the good barrier characteristics of a plurality of silicon nitride. In the superlattice quantum well material of the solar battery, the ultrathin nc-Si layer is used as a quantum well layer for closing current carriers; an nc-Si:H thin film optical band gap forms a transitional structure sequentially from top to bottom; therefore, the absorption spectrum of the solar battery on light is expanded, the total light absorption amount is increased and the absorption efficiency is improved; at the same time, the solar battery has the advantage of keeping the low cost of a secondary thin film battery.