Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof

• Main Authors: YUAN NINGYI, DING JIANNING
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a solar cell, in particular to a nanowire solar cell which has a heterojunction radial structure and is formed by monocrystalline silicon, nanometer silicon and aluminum oxide. The cell structure is a cell structure of n-type monocrystalline silicon /p-type nanometer silicon/aluminum oxide or n-type monocrystalline silicon/i-type nanometer silicon/p-type nanometer silicon/aluminum oxide. In the nanowire solar cell, a monocrystalline silicon (c-Si) nanowire is prepared on a n-type monocrystalline silicon substrate by a wet etching process, and hydrogenated i-type and p-type nanometer silicon (nc-Si:H) membranes are prepared on a monocrystalline nanowire by a plasma enhanced chemical vapor deposition (PECVD) method to form a radial structure of c-Si(n)/nc-Si:H(p) orc-Si(n)/nc-Si:H(i)/nc-Si:H(p) from inside to outside; an Al2O3 layer is prepared by an atomic layer deposition (ALD) technology, and an aluminum-doped zinc oxide layer is prepared by the ALD technology; and finally, an alumin