Semiconductor structure and manufacturing method thereof
The present invention provides one embodiment of a method for making metal gate stacks of semiconductor structures. The method includes forming a first dummy gate and a second dummy gate on a substrate; removing a polysilicon layer from the first dummy gate, resulting in a first gate trench; forming...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
03.10.2012
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Subjects | |
Online Access | Get full text |
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