System and process for the production of polycrystalline silicon for photovoltaic use

• Main Authors: ANTONELLO LUIS MARIA, ZARCONE MARIANO
• Format: Patent
• Language: Chinese; English
• Published: 18.05.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BLASTING; CHEMISTRY; CRYSTAL GROWTH; FURNACES; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; HEATING; KILNS; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; OPEN SINTERING OR LIKE APPARATUS; OVENS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; RETORTS; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WEAPONS

The invention relates to an apparatus and process for the prodution of polycrystalline silicon for photovoltaic applications. The apparatus is characterised in that it comprises of multiple chambers, preferably three(1, 2, 3), arranged longitudinally one after the other and equipped with: gas immission and extraction means; means for guiding (7) and moving the crucible (6) containing the silicon-based material; insulation and temperature control means; heating means; air-tightness means (8) for each chamber. One of said chambers constitutes the furnace of the apparatus and comprises an area (4) in which the smelting of the material contained in the crucible (6) is carried out, said furnace being equipped with heating means and bearing a heat-stable pedestal (5), suitable for moving the crucible vertically and thus for introducing it into, or extracting it from the smelting area (4), respectively.