Multilayer mirror and lithographic apparatus

A multilayer mirror is constructed and arranged to reflect radiation having a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C lay...

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Bibliographic Details
Main Authors GLUSHKOV DENIS, BANINE VADIM, MOORS JOHANNES HUBERTUS JOSEPHINA, SJMAENOK LEONID AIZIKOVITCH, SALASCHENKO NIKOLAI NIKOLAEVICH
Format Patent
LanguageChinese
English
Published 04.05.2011
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
GAMMA RAY OR X-RAY MICROSCOPES
HOLOGRAPHY
IRRADIATION DEVICES
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MATERIALS THEREFOR
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
TRANSPORTING
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Summary:A multilayer mirror is constructed and arranged to reflect radiation having a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C layers, La and B9C layers U and B9C layers, Th and B9C layers, La and B layers, C and B layers, U and B layers, and Th and B layers.
Bibliography:Application Number: CN20098120621