Transistor and fabrication method thereof

The invention provides a transistor and a fabrication method thereof. The transistor includes a gate electrode disposed over a substrate. At least one composite strain structure is disposed adjacent to a channel below the gate electrode. The at least one composite strain structure includes a first s...

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Bibliographic Details
Main Authors SUNG HSUEHANG, CHEN KUAN-YU, LIN HSIEN-HSIN, HING FUNG KA, CHENG CHUN-FAI
Format Patent
LanguageChinese
English
Published 23.03.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a transistor and a fabrication method thereof. The transistor includes a gate electrode disposed over a substrate. At least one composite strain structure is disposed adjacent to a channel below the gate electrode. The at least one composite strain structure includes a first strain region within the substrate. A second strain region is disposed over the first strain region. At least a portion of the second strain region is disposed within the substrate. The transistor comprises a composite stress structure to provide the compression or stretching stress required by the channel of the transistor and increase the electric expression of the transistor.
Bibliography:Application Number: CN201010243664