Methods for etching the edge of a silicon wafer

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

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Bibliographic Details
Main Authors DOANE THOMAS E, SCHMIDT JUDY A, ERK HENRY F, HOLLANDER EUGENE R, ZHANG GUOQIANG DAVID, ALBRECHT PETER D, VANDAMME ROLAND R
Format Patent
LanguageChinese
English
Published 23.02.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
Bibliography:Application Number: CN200980111773