Method for manufacturing storage device

The invention discloses a method for manufacturing a storage device. The method comprises the following steps of: forming a charge storage layer and a bit line polysilicon gate on a semiconductor substrate in turn; forming side wall layers on two sides of the bit line polysilicon gate; and after the...

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Bibliographic Details
Main Authors QU JINGYUN, ZHUO QIDE, YU SHAOXIN, CAI XINYU, CHEN JIANLI
Format Patent
LanguageChinese
English
Published 25.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a method for manufacturing a storage device. The method comprises the following steps of: forming a charge storage layer and a bit line polysilicon gate on a semiconductor substrate in turn; forming side wall layers on two sides of the bit line polysilicon gate; and after the side wall layers are formed by etching, performing recovery treatment on the exposed semiconductorsubstrate, wherein the gases adopted in the recovery treatment comprise carbon tetrafluoride and oxygen, the rate of the gases is 40 to 60 angstroms per minute and the recovery treatment time is 20 to 40 seconds. By adopting the method, the semiconductor substrate has flat surface.
Bibliography:Application Number: CN2009155436