Manufacturing method of inversed AlGaInP light emitting diode

• Main Authors: HONG LINGYUAN, YIN LINGFENG, LIN SUHUI, WU ZHIQIANG, LIN XIAOXIONG
• Format: Patent
• Language: Chinese; English
• Published: 26.01.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method of an inversed AlGaInP light emitting diode. A buffer layer, a cut-off layer, a second conduction-type ohm contact layer, a second conduction-type limiting layer, an active layer, a first conduction-type limiting layer and a first conduction-type window layer successively are subject to epitaxial growth on a temporary substrate to form an epitaxial luminescent layer; a media layer grows on the epitaxial luminescent layer, the graph of a cutting path is defined, and the media layer out of the cutting path is etched; the width of the media layer on the cutting path is more than that of the tool edge of a diamante for cutting; a reflector is evaporated on the epitaxial luminescent layer; the back and the upper surface of a permanent substrate are respectively manufactured with a first ohm contact electrode and an evaporation bonding layer; the reflector is bonded with the bonding layer, and the temporary substrate, the buffer layer and the cut-off layer are removed;