Nickel tin bonding system with semiconductor wafers and devices

A semiconductor wafer, substrate, and bonding structure is disclosed that includes a device wafer that includes, for example, a plurality of light emitting diodes, a contact metal layer (or layers) on one side of the device wafer opposite the light emitting diodes, and a bonding metal system on the...

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Bibliographic Details
Main Authors SLATER DAVID B, KONG HUA-SHUANG, EDMOND JOHN A
Format Patent
LanguageChinese
English
Published 26.01.2011
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Summary:A semiconductor wafer, substrate, and bonding structure is disclosed that includes a device wafer that includes, for example, a plurality of light emitting diodes, a contact metal layer (or layers) on one side of the device wafer opposite the light emitting diodes, and a bonding metal system on the contact metal layer that predominates by weight in nickel and tin.
Bibliography:Application Number: CN201010271760