Up-conversion mixer of silicon germanium bipolar complementary metal oxide semiconductor

• Main Authors: ZHAO YUHANG, CHEN SHOUMIAN, CHEN LEI, LIU SHENGFU, SHI CHUNQI, HUA LIN, LAI ZONGSHENG, ZHANG WEI, ZHANG SHULIN, SU JIE, HU SHAOJIAN, WANG YONG
• Format: Patent
• Language: Chinese; English
• Published: 19.01.2011
• Subjects: BASIC ELECTRONIC CIRCUITRY; DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TOANOTHER; ELECTRICITY

The invention discloses an up-conversion mixer of a silicon germanium bipolar complementary metal oxide semiconductor. The concrete circuit of the mixer comprises two Gilbert double balanced unit structures, and the structure of the circuit, from top down, comprises an output level, a switch level, a transconductance level and a current source level; meanwhile, the circuit also adopts a current injection mode, four N-type MOS tubes are arranged on the topmost end, the current flowing in a switch is extracted dynamically, and the contributions to the noise of the switch are reduced. The mixer combines the advantages of a polar element and an MOS element, takes the advantage of low noise of a silicon germanium element and has the characteristics of low noise, high linearity, low harmonic distortion, high working speed and the like. In the mixer, the single side band noise coefficient is 9dB, and when 1dB is input, the point of compression is -1.3dB and the conversion gain is -2.5dB. The mixer can be used in the