Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency

• Main Authors: LIU CHUANGUI, LIN SUHUI, HE ANHE, PENG KANGWEI
• Format: Patent
• Language: Chinese; English
• Published: 19.09.2012
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method for manufacturing a gallium nitride based light-emitting diode with high light extracting efficiency, comprising the following steps of: providing a sapphire substrate; sequentially growing an N-GaN layer, a light-emitting layer and a P-GaN layer on the substrate; etching part of a surface with the P-GaN layer through a photomask etching process till the N-GaN layer is exposed; plating a transparent conductive layer on the P-GaN layer and the exposed N-GaN layer for forming an ohmic contact; removing part of the transparent conductive layer through a wet etching method to separate the transparent conductive layers on the P-GaN layer from the exposed N-GaN layer; respectively manufacturing a P-electrode and an N-electrode on the separated transparent conductive layers through a photomask etching process; and cutting the substrate into a plurality of light-emitting diode chips by grinding and thinning the substrate. The LED chips manufactured through themethod avoid the light ab