Gallium nitride based light emitting diode with double-layer staggered perforated holes and manufacturing process thereof

• Main Authors: LIN SUHUI, WU ZHIQIANG
• Format: Patent
• Language: Chinese; English
• Published: 25.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a gallium nitride based light emitting diode with double-layer staggered perforated holes and a manufacturing process thereof. The gallium nitride based light emitting diode includes a substrate and a first epitaxial layer and a second epitaxial layer formed thereon, wherein the first epitaxial layer includes a P-GaN layer, the second epitaxial layer includes a P-GaN layer, a luminous zone and an N-GaN layer, the second epitaxial layer is provided with a conducting layer, the conducting layer is provided with an N electrode, the P-GaN layer is provided with a P electrode, the side surfaces of the first epitaxial layer and the second epitaxial layer of the light emitting diode each have a periodically distributed perforated hole, and two layers of perforated holes have a double-layer cross staggered perforated hole structure. The double-layer cross staggered perforated hole structure of the core particles of the invention effectively reduces the dislocation density in GaN based epitaxia