Power metal oxide semiconductor field effect transistor (MOSFET) device with tungsten spacing layer in contact hole and preparation method thereof

• Main Authors: WANG JIAN, HE ZENGYI, SUI XIAOMING, SHEN SIJIE
• Format: Patent
• Language: Chinese; English
• Published: 29.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a power metal oxide semiconductor field effect transistor (MOSFET) device with a tungsten spacing layer in a contact hole and a preparation method thereof. The power MOSFET device is characterized by comprising a groove grid electrode and the tungsten spacing layer, wherein th...