Power metal oxide semiconductor field effect transistor (MOSFET) device with tungsten spacing layer in contact hole and preparation method thereof

• Main Authors: WANG JIAN, HE ZENGYI, SUI XIAOMING, SHEN SIJIE
• Format: Patent
• Language: Chinese; English
• Published: 29.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a power metal oxide semiconductor field effect transistor (MOSFET) device with a tungsten spacing layer in a contact hole and a preparation method thereof. The power MOSFET device is characterized by comprising a groove grid electrode and the tungsten spacing layer, wherein the groove grid electrode is isolated in a groove and is contacted with a source electrode/body region formed in the contact hole; and the tungsten spacing layer is deposited at the bottom corner of the contact hole and arranged between a Ti/TiN barrier layer and an aluminium metal layer so as to cover the bottom corner of the contact hole. The tungsten spacing layer is arranged at the bottom corner of the contact hole, so the aluminium puncturing problem caused by direct contact of the silicon and the aluminium resulted from the formation of a pit at the bottom corner of the contact hole and the Ti/TiN barrier layer does not have high step coverage can be effectively prevented, the failure of the power MOSFET device