Large-power forward LED chip structure

• Main Authors: WU DAKE, ZHANG KUN, ZHU GUOXIONG
• Format: Patent
• Language: Chinese; English
• Published: 29.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; BLASTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF; HEATING; INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO THEFORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THELIGHT EMITTED; LIGHTING; MECHANICAL ENGINEERING; NON-PORTABLE LIGHTING DEVICES; SEMICONDUCTOR DEVICES; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLEEXTERIORS; WEAPONS

The invention relates to a large-power forward LED chip structure comprising a transparent passivating layer, a P pressure welding point, a transparent electrode layer, an N electrode, an LED epitaxial layer, a sapphire substrate and a reflection solder layer, wherein the surface of the reflection solder layer forms a DBR optical reflection layer in the mode of optical coating; and the bottom of the reflection solder layer is provided with a high heat conduction substrate layer. The large-power forward LED chip of the invention combines the heat conduction substrate with the DBR optical reflection film to solve the problem of heat dissipation and light emitting efficiency improvement for the large-power LED chip when high-current density is small.