Semiconductor device

• Main Authors: FURUSAWA TAKESHI, TAKEWAKA HIROKI, KAMOSHIMA TAKAO
• Format: Patent
• Language: Chinese; English
• Published: 22.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semiconductor device which can suppress or prevent the generation of a crack in an insulating film below an external terminal which could be caused by an external force added to the external terminal of the semiconductor device. A top wiring layer MH of wiring layers formed on a main surface of a silicon substrate has a pad comprising a conductor pattern containing aluminum. On an undersurface of the pad, there are arranged a barrier conductor film formed by laminating, from below, a first barrier conductor film and a second barrier conductor film. Of a fifth wiring layer which is one layer lower than the top wiring layer, in an area overlapping with a probe contact area of the pad in a plane, the conductor pattern is not arranged. Further, the first and second barrier conductor films are the conductor films including titanium and titanium nitride as principal components, respectively. Also, the first barrier conductor film is thicker than the second barrier conductor film.