Method for improving surface uniformity of charge storage layer

The invention discloses a method for improving surface uniformity of a charge storage layer, which comprises the following steps: forming a charge storage layer structure on a charge storage area and a peripheral circuit area on a semiconductor substrate; removing the charge storage layer structure...

Full description

Saved in:
Bibliographic Details
Main Authors XU MEILING, HAN YONGZHAO, CHEN ZIFAN, CAI XINYU
Format Patent
LanguageChinese
English
Published 10.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The invention discloses a method for improving surface uniformity of a charge storage layer, which comprises the following steps: forming a charge storage layer structure on a charge storage area and a peripheral circuit area on a semiconductor substrate; removing the charge storage layer structure on the peripheral circuit area, wherein the charge storage layer structure has residue on the peripheral circuit area after removal; forming a protective layer on the charge storage layer structure of the charge storage area; pre-cleaning the residual charge storage layer structure on the peripheral circuit area; and removing the protective layer. The method effectively improves the uniformity of the charge storage layer structure and further improves the electric properties of devices.
Bibliography:Application Number: CN200910083468