Semiconductor sensor and production method

• Main Authors: BAI SUO, WU WEIWEI, QIN YONG, CUI NUANYANG
• Format: Patent
• Language: Chinese; English
• Published: 20.10.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a sensor for ultraviolet detection and a production method thereof. The semiconductor sensor of the invention is integrated by two electrodes, and a zinc oxide nanowire positioned between the two electrodes in a parallel way. The production method of the semiconductor sensor of the invention comprises the following steps of: firstly growing a layer of zinc oxide nanowire array which is vertical to a substrate surface on a first substrate, then transferring the zinc oxide nanowire array onto the surface of a second substrate, placing an electrode pattern on a masking film plate onto a gluing surface, making the electrode pattern be vertical to the two ends of the oriented nanowire and cover the end parts of the nanowire so as to carry out exposing, developing and photoetching, then depositing at least one electric conduction metal-made electrode in an electrode area which is formed by photoetching in a physical method, then stripping the electrodes and the nanowire from the second subst