Semiconductor circuit

The invention discloses a semiconductor circuit which comprises a base plate, a dielectric layer, a polycrystalline silicon layer and a voltage source wire, wherein the dielectric layer is arranged on the base plate, the polycrystalline silicon layer is arranged on the dielectric layer and is provid...

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Bibliographic Details
Main Authors YANG JINGRONG, HUANG YAOSHENG
Format Patent
LanguageChinese
English
Published 20.10.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a semiconductor circuit which comprises a base plate, a dielectric layer, a polycrystalline silicon layer and a voltage source wire, wherein the dielectric layer is arranged on the base plate, the polycrystalline silicon layer is arranged on the dielectric layer and is provided with a first doping region, a second doping region and an intrinsic region positioned between the first doping region and the second doping region; the voltage source wire passes through above the polycrystalline silicon layer; the polycrystalline silicon layer forms a voltage-stabilizing capacitor through the first doping region, the second doping region and the intrinsic region; and the voltage-stabilizing capacitor is used for correspondingly stabilizing passing voltages of the voltage source wire and further improving the stability of the semiconductor circuit.
Bibliography:Application Number: CN20091134488