Check method for model calculation in circuit simulation

The invention provides a check method of model calculation in circuit simulation, belonging to the field of electron design automation. The method comprises the following steps of: scanning node voltage of a single transistor; respectively calculating the relationship of various parameters in a devi...

Full description

Saved in:
Bibliographic Details
Main Authors SHANG YECHUN, ZHOU ZHENYA, WU DAKE
Format Patent
LanguageChinese
English
Published 06.10.2010
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The invention provides a check method of model calculation in circuit simulation, belonging to the field of electron design automation. The method comprises the following steps of: scanning node voltage of a single transistor; respectively calculating the relationship of various parameters in a device model and scanning voltage; and investigating an analyzing derivative and a numerical derivative of the parameter. By checking the change continuousness of the parameters along with the scanning voltage and the consistency of the analyzing derivative and the numerical derivative, the problems in the model calculation can be found and corrected, thereby ensuring the continuousness, the smoothness and no singular point in the relationship of the parameters and various bias voltages and ensuring the accurate calculation of various parameters on the derivatives of the voltages. The method can be used for improving the performances of a circuit simulator and can also be used for checking the non-convergence phenomeno
Bibliography:Application Number: CN20101200001