Chemical vapor deposition device

The invention discloses a chemical vapor deposition device, which comprises a plurality of independent growth chambers which are positioned in a tank body, use mechanical arms for conveying samples and are used for growing materials of different growing processes, such as n-type layer epitaxial mate...

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Bibliographic Details
Main Authors HU GUOXIN, YANG JIANKUN, LIANG YONG, ZENG YIPING, WANG JUNXI, LU HONGXI, RAN JUNXUE, LI JINMIN, DUAN RUIFEI
Format Patent
LanguageChinese
English
Published 01.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a chemical vapor deposition device, which comprises a plurality of independent growth chambers which are positioned in a tank body, use mechanical arms for conveying samples and are used for growing materials of different growing processes, such as n-type layer epitaxial materials, multiquantum well active layers, and p-type layer epitaxial materials. When the device is used, the problem that because the conventional chemical vapor deposition device, particularly MOCVD device, grows a structural material at one time in a single reaction room, the conventional chemical vapor deposition device is complex and the deposition process is complex, susceptible to various factors, low in repeatability, low in promotion property, long in process period and low in production efficiency, and other problems are solved.
Bibliography:Application Number: CN20101162506