Preparation process for growing zinc oxide nanorod arrays by two-step method

The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive...

Full description

Saved in:
Bibliographic Details
Main Authors HU ANZHENG, HUANG XINTANG
Format Patent
LanguageChinese
English
Published 09.05.2012
Subjects
Online AccessGet full text

Cover

Loading…
Abstract The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive polyester film through a glue homogenizing method or a pulling method; and then growing the ZNRs by using a low-temperature liquid phase method. The 'two-step method' solves the problem that the ZNRs cannot be grown on the indium tin oxide conductive polyester film directly, and can also prepare the ZNRs with different densities according to requirements. The one-dimensional ZNRs have good application prospects in the fields such as nanometer electrons, photoelectrons, flexible electrochromismdevices and the like.
AbstractList The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive polyester film through a glue homogenizing method or a pulling method; and then growing the ZNRs by using a low-temperature liquid phase method. The 'two-step method' solves the problem that the ZNRs cannot be grown on the indium tin oxide conductive polyester film directly, and can also prepare the ZNRs with different densities according to requirements. The one-dimensional ZNRs have good application prospects in the fields such as nanometer electrons, photoelectrons, flexible electrochromismdevices and the like.
Author HUANG XINTANG
HU ANZHENG
Author_xml – fullname: HU ANZHENG
– fullname: HUANG XINTANG
BookMark eNqNyr0KwjAQAOAMOvj3Dod7wVALnVsUBxEH93Im1xrQu3AJ1Pr0Lj6A07d8SzNjYVqY81UpomIOwhBVHKUEvSgMKmPgAT6BHcg7eAJGFhUPqIpTgvsEeZQiZYrwovwQvzbzHp-JNj9XZns83NpTQVE6ShEdMeWuvdidrW1d7qumKf9KX2phOG4
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID CN101818345BB
GroupedDBID EVB
ID FETCH-epo_espacenet_CN101818345BB3
IEDL.DBID EVB
IngestDate Fri Jul 19 12:41:53 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN101818345BB3
Notes Application Number: CN20091272849
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120509&DB=EPODOC&CC=CN&NR=101818345B
ParticipantIDs epo_espacenet_CN101818345BB
PublicationCentury 2000
PublicationDate 20120509
PublicationDateYYYYMMDD 2012-05-09
PublicationDate_xml – month: 05
  year: 2012
  text: 20120509
  day: 09
PublicationDecade 2010
PublicationYear 2012
RelatedCompanies XIANGFAN UNIVERSITY
RelatedCompanies_xml – name: XIANGFAN UNIVERSITY
Score 2.9578462
Snippet The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which...
SourceID epo
SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
CRYSTAL GROWTH
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INORGANIC CHEMISTRY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title Preparation process for growing zinc oxide nanorod arrays by two-step method
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120509&DB=EPODOC&locale=&CC=CN&NR=101818345B
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1RS8MwED7mFPVNp6JOJYj0rciatlsfitB0Y4jrikzZ22ibOOdDWrrK3H6913RzPu0tJHDkLny5y-XyBeAhsRJuOJGltynv6CaNHN2JuKHb3LZFmybCVPmOQWD338znsTWuwdfmLYziCV0ockREVIJ4L9R-nW2TWL6qrZw_xjPsSp96I9fX1qfjllHSmWi-53bDoT9kGmMuC7Tg1VXEVB1qWt4e7JdhdMmz3333ylcp2X-X0juBgxClyeIUaqvPBhyxzc9rDTgcrC-8sbnG3vwMXsJcVETdqSRZVd9PMOQkUzxJowMiq5lMSPqDWhEZyRR3RhLlebSck3hJikWq44JmpPoy-hzue90R6-s4rcmfDSYs2Grg0Quoy1SKSyAYslCrxeOOHXNTiJbD24bxgcCKMVYTgl5Bc4eg652jTTguTarK-5wbqBf5t7hFF1zEd8p2vx4Si5U
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUaPiR2PM3hbDus-HxWQbBBUGMWh4I9taFR-6Zcwg_PXeCohPvDVtcmmv-fXu2uvvAO4SI2GaExmqRZmt6jRyVCdimmoy0-QWTbgu7zt6odl51Z9GxqgCX-u_MJIndCbJERFRCeK9kOd1trnECmRu5fQ-nmBX-tAeuoGyio6bWklnogSe2xr0g76v-L7rh0r44kpiKpvqhrcDuxaGhCXPfuvNK3-lZP9NSvsQ9gYoTRRHUFl81qHmryuv1WG_t3rwxuYKe9Nj6A5yviTqTgXJlvn9BF1O8oGRNBogspiIhKQ_uCoiIpHiyUiiPI_mUxLPSTFLVdzQjCxLRp_Abbs19DsqTmv8p4OxH25W4NFTqIpU8DMg6LJQo8li24yZznnTYZamvSOwYvTVOKfn0Ngi6GLr6A3UOsNed9x9DJ8bcFCqV6b6OZdQLfJvfoXmuIivpR5_ActvjoA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Preparation+process+for+growing+zinc+oxide+nanorod+arrays+by+two-step+method&rft.inventor=HU+ANZHENG&rft.inventor=HUANG+XINTANG&rft.date=2012-05-09&rft.externalDBID=B&rft.externalDocID=CN101818345BB