Preparation process for growing zinc oxide nanorod arrays by two-step method
The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive...
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Format | Patent |
Language | Chinese English |
Published |
09.05.2012
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Abstract | The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive polyester film through a glue homogenizing method or a pulling method; and then growing the ZNRs by using a low-temperature liquid phase method. The 'two-step method' solves the problem that the ZNRs cannot be grown on the indium tin oxide conductive polyester film directly, and can also prepare the ZNRs with different densities according to requirements. The one-dimensional ZNRs have good application prospects in the fields such as nanometer electrons, photoelectrons, flexible electrochromismdevices and the like. |
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AbstractList | The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive polyester film through a glue homogenizing method or a pulling method; and then growing the ZNRs by using a low-temperature liquid phase method. The 'two-step method' solves the problem that the ZNRs cannot be grown on the indium tin oxide conductive polyester film directly, and can also prepare the ZNRs with different densities according to requirements. The one-dimensional ZNRs have good application prospects in the fields such as nanometer electrons, photoelectrons, flexible electrochromismdevices and the like. |
Author | HUANG XINTANG HU ANZHENG |
Author_xml | – fullname: HU ANZHENG – fullname: HUANG XINTANG |
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Notes | Application Number: CN20091272849 |
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Snippet | The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | Preparation process for growing zinc oxide nanorod arrays by two-step method |
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