Preparation process for growing zinc oxide nanorod arrays by two-step method

The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive...

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Bibliographic Details
Main Authors HU ANZHENG, HUANG XINTANG
Format Patent
LanguageChinese
English
Published 09.05.2012
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Summary:The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive polyester film through a glue homogenizing method or a pulling method; and then growing the ZNRs by using a low-temperature liquid phase method. The 'two-step method' solves the problem that the ZNRs cannot be grown on the indium tin oxide conductive polyester film directly, and can also prepare the ZNRs with different densities according to requirements. The one-dimensional ZNRs have good application prospects in the fields such as nanometer electrons, photoelectrons, flexible electrochromismdevices and the like.
Bibliography:Application Number: CN20091272849