Process for selective area deposition of inorganic materials

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after...

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Bibliographic Details
Main Authors IRVING LYN MARIE, YANG CHENG, COWDERY-CORVAN PETER JEROME, LEVY DAVID HOWARD, FREEMAN DIANE CAROL
Format Patent
LanguageChinese
English
Published 17.07.2013
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Summary:An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
Bibliography:Application Number: CN200880109120