Grower of high-purity semi-insulating silicon carbide single crystal

• Main Authors: CHEN ZHIZHAN, SHI ERWEI, CHEN BOYUAN, YAN CHENGFENG, XIAO BING
• Format: Patent
• Language: Chinese; English
• Published: 18.08.2010
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a grower of a high-purity semi-insulating silicon carbide single crystal, belonging to the field of crystal growth. The grower comprises a vacuum chamber, a graphite crucible and an induction coil. The grower of the invention is used for growing the high-purity semi-insulating silicon carbide single crystal based on the technology of physical vapor transport (PVT) without specific growing processes. The invention is mainly characterized in that the side wall of a growing furnace is in a multi-layer (at least three-layer) structure, and more than two independent spaces are formed in the side wall and are respectively used for introducing cooling water and high-purity inert gas (generally, high-purity argon gas) or introducing cooling water and vacuumizing. The grower of the invention can be used for effectively isolating the graphite crucible from air, preventing nitrogen gas in the air from entering the graphite crucible in the growing process and effectively controlling nitrogen elem