Determining method of PCRAM reading bias voltage

• Main Authors: YAN JUNBING, ZHOU PENGJU, SHI ZHENDONG, ZHU YUEYU
• Format: Patent
• Language: Chinese; English
• Published: 14.07.2010
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention provides a determining method of PCRAM reading bias voltage, which determines PCRAM reading circuit bias voltage according to the mean value of low resistance and high resistance and standard deviation of a PCRAM storage unit and is realized by the following concrete steps: (1) determining the mean value u of the low resistance and the high resistance and the standard deviation sigma of the PCRAM storage unit; (2) calculating N value according to the allowable error rate of the storage array capacity, wherein the upper limit value of the low resistance is less than u-+N-sigma- and the lower limit value of the high resistance is more than u+-N+sigma+, the precision rates of the low resistance and the high resistance respectively meet the requirements; (3) judging whether the inequation u-+N-sigma->u+-N+sigma+ is right or not, if right, transferring to the step (5), otherwise transferring to the step (4); (4) calculating the bias resistance value x to enable the precision rates F-(x) and F-(x) of