Microlens mask of image sensor and method for forming microlens using the same

• Main Author: KIM JONG MAN
• Format: Patent
• Language: Chinese; English
• Published: 30.06.2010
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

Provided are a microlens mask of an image sensor and a method for forming a microlens using the same. In the method, an insulating layer is formed on a semiconductor substrate comprising a photodiode and a transistor. A passivation layer is formed on the insulating layer. A color filter layer is formed on the insulating layer vertically corresponding to the photodiode through the passivation layer. A microlens photoresist layer is formed over an entire surface of the semiconductor substrate. A microlens mask is formed on the microlens photoresist corresponding to the color filter layer. A one-time exposure process is performed at a light intensity of about 450/0 to about 550/0 dose/focus. The microlens photoresist layer is patterned to form a patterned microlens photoresist layer by removing the photoresist subjected to the exposure process. The patterned microlens photoresist layer is reflowed to form the microlens.